Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell

Abstract The importance of positive band offset at the p–n interface heterojunction thin‐film solar cells has been underlined in authors' previous work on theoretical study role n‐type layer determining open‐circuit voltage – and experimental by other research groups. An material with low electron affinity potential to fulfill requirements for producing a high‐performance cell. In this current work, new alternative transparent conductive oxide chalcopyrite is investigated alloying ZnO GeO 2 grow Zn‐Ge‐O affinity. film grown metal organic chemical vapor deposition tetramethoxygermanium as Ge source. Through characterization, it confirmed that higher concentrations result lower affinities relatively constant valence maximums. Different [Ge] / ([Zn] + [Ge]) also affects morphology, from polycrystalline concentration aggregation nanocrystals Ge. Electronic characterization preliminary device application test show promising results future an cells.